advance product information october 13, 2003 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 10 gb/s single ended to differential amplifier TGA2951-EPU key features and performance ? 3db bandwidth: 9.5 ghz ? 21 db differential gain ? single ended in, differential out ? crossing adjustment (xovr) ? output level adjust (outlvl) ? up to 1.5 vpp differential out ? output power detector ? 0.25m 3mi phemt technology ? self bias: v d = 5v, i d = 72 ma ? chip dimensions: 1.00 x 1.10 x 0.1 mm (0.039 x 0.043 x 0.004 inches) preliminary measured performance bias conditions: v d = 5v, i d = 72 ma primary applications ? oc-192/stm-64 fiber optic systems 10.7 gb/s 70mvpp input (n/c) vadj 0 3 6 9 12 15 18 21 02468101214161820 frequency (ghz) single ended gain (db) rf out (+) s21 rf out (-) s31 product description the triquint TGA2951-EPU is a single ended to differential amplifier for oc-192/stm-64 fiber optic system receive chains. the TGA2951-EPU provides a single ended to differential conversion with gain. the part is designed using triquints proven standard 0.25 um gate power phemt production process. the TGA2951-EPU is 100% dc and rf tested on-wafer to ensure performance compliance.
advance product information october 13, 2003 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com TGA2951-EPU table i maximum ratings 1/ symbol parameter value notes v + positive supply voltage 5.5 v 2/ i + positive supply current 84 ma 2/ p in input continuous wave power 15 dbm 2/ p d power dissipation 462 mw 2/, 3/ t ch operating channel temperature 150 c 4/, 5 / t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ when operated at this power dissipation with a base plate temperature of 70 c, the median life is 1 e+6 hours. 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ these ratings apply to each individual fet.
advance product information october 13, 2003 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com table ii rf characterization table (t a = 25 c, nominal) bias conditions: v d = 5v, i d = 72 ma parameter conditions typical units differential gain 1 ghz 21 db 3db bandwidth 9.5 ghz small signal gain delta 1 C 9 ghz 0.25 db input return loss 1 C 9 ghz 15 db output return loss (s22, s33) 1 C 9 ghz 15 db insertion phase delta 1 C 9 ghz 180 2 deg group delay ripple reference to 1 ghz 4 ps nominal crossing level over output operating range 50 % crossing level adjustment 10 % output adjustment 15 db detector output output levels 0 C 650 vpp s/e 0 C 150 mv note: table ii lists the rf characteristics of typical devices as determined by fixtured measurements. TGA2951-EPU
advance product information october 13, 2003 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com preliminary measured performance bias conditions: v d = 5v, i d = 72 ma -30 -25 -20 -15 -10 -5 0 02468101214161820 frequency (ghz) return loss (db) rf out (+) s22 rf out (-) s33 rf in 0 3 6 9 12 15 18 21 02468101214161820 frequency (ghz) single ended gain (db) rf out (+) s21 rf out (-) s31 TGA2951-EPU 0 2 4 6 8 10 12 14 16 18 20 frequency (ghz) 0 20 40 60 80 100 120 140 160 180 200 group delay (ps)
advance product information october 13, 2003 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com -30 -25 -20 -15 -10 -5 0 02468101214161820 frequency (ghz) input retun loss (db) -50 deg c -25 deg c 0 deg c 25 deg c 75 deg c -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 101214161820 frequency (ghz) positive output return loss (db) -50 deg c -25 deg c 0 deg c 25 deg c 75 deg c -5 0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20 frequency (ghz) single ended gain (db) -50 deg c -25 deg c 0 deg c 25 deg c 75 deg c preliminary measured performance bias conditions: v d = 5v, i d = 72 ma TGA2951-EPU
advance product information october 13, 2003 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com typical fixtured performance bias conditions: 10.7 gb/s & 0 - 3 v vadj with constant 70mvpp input 0.0v (n/c) oadj 100mv / div 2v oadj 100mv / div 2.5v oadj 100mv / div 3.0v oadj 100mv / div TGA2951-EPU
advance product information october 13, 2003 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA2951-EPU 8qlwv ploolphwhuv lqfkhv 7klfnqhvv uhihuhqfhrqo\ &klshgjhwrerqgsdgglphqvlrqvduhvkrzqwrfhqwhurisdg &klsvl]hwrohudqfh *1',6%$&.6,'(2)00,& %rqg3dg 5),1 [ [ %rqg3dg '(7 [ [ %rqg3dg 5() [ [ %rqg3dg 5()/9/ [ [ %rqg3dg %/. [ [ %rqg3dg%/. [ [ %rqg3dg5)287 [ [ %rqg3dg5)287 [ [ %rqg3dg 9' [ [ %rqg3dg;295 [ [ %rqg3dg2$'- [ [
advance product information october 13, 2003 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com chip assembly & bonding diagram gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. rf out - det ref ref lvl rf out + vd xovr oadj rf in note: rf ports are dc coupled TGA2951-EPU
advance product information october 13, 2003 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com output level detector 0 20 40 60 80 100 120 140 160 0 100 200 300 400 500 600 700 output amplitude (vpp) delta detector voltage (v) 10.7gb/s 2^31-1 prbs 10.7gb/s 2^7-1 prbs 0.00 0.05 0.10 0.15 0.20 0.25 0.00.51.01.52.02.53.0 frequency (ghz) delta (vdet - vref) 800mvpp cw 400mvpp cw 200mvpp cw TGA2951-EPU
advance product information october 13, 2003 10 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. triquint semiconductor texas phone: (972)994-8465 fax: (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. assembly process notes reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c. TGA2951-EPU
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